Influence of absorbed gamma-ray dose on the characteristics of semiconductor detectors of electromagnetic radiation
Since the radiation effect manifest itself in association with other macroscopic phenomena (temperature, voltage, noise), the central topic examined in this paper is the influence of the dose of gamma radiation on macroscopic characteristics, i. e. on the ideality factor. The physical phenomena under consideration are complex because, in addition to high-energy gamma radiation, there is also a 1/f noise of low-energy radiation. In addition, in the semiconductor detector of electromagnetic radiation, all the microscopic effects characteristic of the behavior of the diode structure in the synergy of high-energy and low-energy radiation field come to the fore. Since all the effects that occur are of a stochastic nature, their influence on the macroscopic properties of the detector is expressed by the ideality factor. In the paper, stochastic phenomena of microscop discharges in a semiconductor (p-n) detector are connected with macroscopic phenomena, as well as the possibility of their statistical correlation.